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Two-dimensional “pseudo-donor–acceptor-pairs” model of recombination dynamics in InGaN/GaN quantum wells
Acte de colloque

Two-dimensional “pseudo-donor–acceptor-pairs” model of recombination dynamics in InGaN/GaN quantum wells

Aurélien Morel, Pierre Lefebvre, Thierry Taliercio, Bernard Gil, Nicolas Grandjean, Benjamin Damilano et Jean Massies
Physica E: Low-dimensional Systems and Nanostructures, Vol.17, pp.64-67
Proceedings of the International Conference on Superlattices, Nano-structures and Nano-devices - ICSNN 2002.
International Conference on Superlattices, Nano-structures and Nano-devices - ICSNN 2002. (Toulouse, France, 22/07/2002–26/07/2002)
20/02/2003

Résumé

Recombination dynamics in InGaN/GaN quantum wells has been studied by time resolved photoluminescence (PL). The radiative recombination processes in these systems can be qualitatively explained on a nanometer-scale by a model based on the recombination dynamics of two dimensional “pseudo-donor–acceptor pairs”.

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