Résumé
Integrated optics have a wide range of applications in telecommunications, information treatment and lab-on-chip analysis. Nowadays, light is in most cases generated outside of the photonic device, coupled with it through optical fibers. The integration of reliable light sources would make these devices more efficient, more robust and would allow the integration of active components.
In that view, core-shell quantum dots (QDs) show unique properties: their emission wavelength can be tuned, they present high quantum yield and their integration in photonic devices is based on classical fabrication process. Moreover, the band structure of core shell QDs give rise to interesting features. In type II QDs, such as CdS/ZnSe, one type of charge carrier is confined in the core and the other in the shell, what allows single exciton gain. On the contrary, in type I QDs, such as CdSe\ZnSe, both charge carriers are strongly confined in the core, what results in high emission quantum yield and single photon emitter behaviour.
Here, we present an original method to finely tune the band structure of visible emitting core\shell QDs between type I and type II. We study CdSe(1-x)Sx\ZnS\ZnS QDs with various compositions of the alloyed core and we show that, by changing the ratio between sulfur and selenium, one can shift continuously from type I to type II. Based on transient absorption spectroscopy measurements, we also analyse the evolution of gain with the proportion of selenium in the core.