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Total Ionizing Dose in 130-nm and 55-nm SiGe:C Heterojunction Bipolar Transistors
Acte de colloque   Open Access

Total Ionizing Dose in 130-nm and 55-nm SiGe:C Heterojunction Bipolar Transistors

Bruno Sagnes, A Adebabay Belie, Fabien Pascal, Jérôme Boch, Tadec Maraine, Alain Hoffmann, Menel Bouhouche, Sebastien Haendler, Pascal Chevalier et Daniel Gloria
RADiation Effects on Components and Systems 2024 (RADECS 2024) (Maspalomas, Spain, 16/09/2024–20/09/2024)

Résumé

Annealing DC Characteristics SiGe:C HBTs TID X-ray irradiation
In this work, the total ionizing dose in 0.13µm and 55nm SiGe: C HBTs are presented. The HBTs were exposed a maximum TID of 950 krad. Moreover, the impact of geometry was investigated. More than 70 % of the degradation were recovered in the total of three step annealing (at 100℃, 130℃ and 140℃ )

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