Résumé
In this work, high X-ray TID exposures are assessed for 130 nm and 55 nm SiGe:C HBTs technologies. The impact of geometry, technology type and collector doping on the degradation of I B were investigated. Annealing experiments were studied.
- Titre
- Total Ionizing Dose in 130-nm and 55-nm SiGe:C Heterojunction Bipolar Transistors
- Créateurs - sans rôle
- A. Adebabay Belie - IES, University of Montpellier,CNRS,Montpellier,FranceF. Pascal - IES, University of Montpellier,CNRS,Montpellier,FranceJ. Boch - IES, University of Montpellier,CNRS,Montpellier,FranceT. Maraine - IES, University of Montpellier,CNRS,Montpellier,FranceA. Hoffmann - IES, University of Montpellier,CNRS,Montpellier,FranceM. Bouhouche - IES, University of Montpellier,CNRS,Montpellier,FranceB. Sagnes - IES, University of Montpellier,CNRS,Montpellier,FranceP. Chevalier - STMicroelectronics,Crolles Cedex,France,38926D. Gloria - STMicroelectronics,Crolles Cedex,France,38926
- Détails de publication
- 2024 24th European Conference on Radiation and Its Effects on Components and Systems (RADECS), pp.1-4
- Éditeur
- IEEE
- Identifiants
- 99162726209311
- Unité académique
- Institut d'Electronique et des Systèmes - IES
- Langue
- English
- Type de ressource
- Conference proceeding