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Total Ionizing Dose in 0.13μm and 55nm SiGe : C HBTs
Acte de colloque

Total Ionizing Dose in 0.13μm and 55nm SiGe : C HBTs

A. Adebabay Belie, Fabien Pascal, Jérôme Boch, Tadec Maraine, Alain Hoffmann, Menel Bouhouche, Bruno Sagnes, Sébastien Haendler, Pascal Chevalier et Daniel Gloria
International Conference RADECS 2024 (Maspalomas, Canary Islands, Spain, 16/09/2024–20/09/2024)

Résumé

Annealing,SiGe : C,HBT,X Ray,
In this work, the total ionizing dose in 0.13μm and 55nm SiGe: C HBTs are presented. The HBTs were exposed a maximum TID of 950 krad. Moreover, the impact of geometry was investigated. More than 70 % of the degradation were recovered in the total of three step annealing (at 100℃, 130℃ and 140℃ )

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