Résumé
The SOI structural characterization is addressed in this paper by using split capacitance measurements on p-i-n gated diodes. The p+ and n+ contacts supply promptly electrons and holes in the body, preventing the diode from the parasitic transient effects that undermine the capacitance measurements in SOI MOSFETs. A novel method to determine the silicon film thickness, based on the capacitance derivative, is presented and validated by experiments and TCAD simulations.