Résumé
Abstract- 4H-SiC PiN diodes have been manufactured on a Norstel epitaxied P+ZN/N* substrate with a combination of Mesa and JTE as edge termination. A breakdown voltage of 3.3 kV has been measured at lµA regardless the active area (0.16 and 2.56 mm2). A differential on-resistance of 1.7 mOhm.cm2 was extracted at 15A-25°C. The recovery charge was only of 300 nC for a switched current of 15A at 300°C at a blocking voltage of 500V. 50% of the diodes exhibit a voltage shift of about IV, after a 60 hours DC- stress (25degC-225°C). The leakage current level remains unaffected after the DC stress.