Résumé
—SiGe:C heterojunction bipolartransistors (HBTs) have emerged to addressthe high demand of high-speed applicationsin telecommunications and more recently inthe space domain. But the ramifying effectsof radiation on the DC characteristics andlow-frequency noise of SiGe HBTs revealthe degradation in performance and reliability of SiGe HBTs and their associatedcircuits. Consequently, it is important tounderstand the impacts of total ionizingdose on SiGe HBTs to design radiation-tolerant and viable electronic devices. This presentation investigates the impacts of X-rayirradiations on advanced SiGe:C HBTs,specifically the ones developed in the B55BiCMOS technology with fT/fmax of 320/370GHz, supplied by STMicroelectronics inthe framework of the European SHIFTproject. Different degradation parameters, such as relative base current and base