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Terahertz imaging using high electron mobility transistors as plasma wave detectors
Acte de colloque

Terahertz imaging using high electron mobility transistors as plasma wave detectors

S. Nadar, D. Coquillat, M. Sakowicz, H. Videlier, F. Teppe, N. Dyakonova, W. Knap, J.-M. Peiris, J. Lyonnet, D. Seliuta, …
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Vol.6, pp.2855-2857
15th International Semiconducting and Insulating Materials Conference (SIMC-XV) Vilnius Univ, Vilnius, LITHUANIA (Lithuania, 15/06/2009–18/06/2009)
12/2009
DOI: https://doi.org/10.1002/PSSC.200982532

Résumé

FIELD-EFFECT TRANSISTOR SUBTERAHERTZ RADIATION
Two experiments demonstrate that high electron mobility transistors (HEMTs) are well suited for terahertz (THz) imaging. We have shown that HEMTs can be effectively used as plasma wave detectors in a THz imaging system at frequencies higher than 1 THz at room temperature and this device are sensitive to the polarization direction of THz radiation.

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