Terahertz detection using Si-SiGe MODFETs

Y.M Meziani; J.E Velazquez-Perez; Dominique Coquillat; Nina Diakonova; Wojciech Knap; I Grigelionis; E Garcia-Garcia; K Fobelets

doi:10.1109/CDE.2013.6481369

Acte de colloque

Terahertz detection using Si-SiGe MODFETs

Y.M Meziani, J.E Velazquez-Perez, Dominique Coquillat, Nina Diakonova, Wojciech Knap, I Grigelionis, E Garcia-Garcia et K Fobelets

Electron Devices (CDE), 2013 Spanish Conference on

Spanish Conference on Electron Devices (CDE), 2013 (Valladolid, Spain, 12/02/2013–14/02/2013)

2013

DOI: https://doi.org/10.1109/CDE.2013.6481369

Résumé

HEMTs

Logic gates

MODFETs

Oscillators

Plasma waves

Silicon HEMTs

Silicon

We report on resonant and non-resonant (broad-band) detection of terahertz (THz) radiation using Strained-Si MODFETs. The devices were excited at room temperature by two types of THz sources at 0.292 THz and at 1.5 THz. Non-resonant response with maxima around the threshold voltage was observed. Shubnikov-de Haas along with photoresponse measurements were performed simultaneously to demonstrate that the observed response is related to the plasma waves oscillation in the channel. The device was cooled down to 4.2 K and resonant signature could be observed.

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Détails

Titre: Terahertz detection using Si-SiGe MODFETs
Créateurs - sans rôle: Y.M Meziani - Universidad de Salamanca
J.E Velazquez-Perez - Universidad de Salamanca
Dominique Coquillat - Université de Montpellier, Laboratoire Charles Coulomb - L2C
Nina Diakonova - Université de Montpellier, Laboratoire Charles Coulomb - L2C
Wojciech Knap - Université de Montpellier, Laboratoire Charles Coulomb - L2C
I Grigelionis - Université de Montpellier
E Garcia-Garcia - Spanish Center for Pulsed Lasers
K Fobelets - Imperial College London
Détails de publication: Electron Devices (CDE), 2013 Spanish Conference on
Colloque: Spanish Conference on Electron Devices (CDE), 2013 (Valladolid, Spain, 12/02/2013–14/02/2013)
Identifiants: 9937933009311
Unité académique: Laboratoire Charles Coulomb - L2C
Langue: English
Type de ressource: Conference proceeding
Champs locaux: hal-00816915