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Terahertz detection by InGaAs HEMTs in quantizing magnetic fields: Relation between magnetoresistance and photovoltaic response
Acte de colloque

Terahertz detection by InGaAs HEMTs in quantizing magnetic fields: Relation between magnetoresistance and photovoltaic response

Oleg A. Klimenko, Yury A. Mityagin, Hadley Videlier, Stephane Boubanga-Tombet, Frederic Teppe, Nina V. Dyakonova, Salman H. Nadar, Sergey A. Savinov, Christophe Consejo, Vladimir N. Murzin, …
35th International Conference on Infrared, Millimeter, and Terahertz Waves, pp.1-2
09/2010

Résumé

Indium gallium arsenide Logic gates Magnetic field measurement Magnetic fields Magnetoresistance Oscillators Transistors
THz detection by plasma wave mechanism in InGaAs HEMTs is studied in high/quantizing magnetic fields regime. The correlation between the photovoltaic response and magnetoresistance is revealed. It allows to explain the nature of strong oscillations observed in the transistor Terahertz photoresponse.

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