Terahertz Imaging with InP High-electron-mobility Transistors

Takayuki Watanabe; Keisuke Akagawa; Yudai Tanimoto; Dominique Coquillat; Wojciech Knap; Taiichi Otsuji

doi:10.1117/12.887952

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Terahertz Imaging with InP High-electron-mobility Transistors

Takayuki Watanabe, Keisuke Akagawa, Yudai Tanimoto, Dominique Coquillat, Wojciech Knap et Taiichi Otsuji

Proceedings of SPIE, Vol.8023

TERAHERTZ PHYSICS, DEVICES, AND SYSTEMS V: ADVANCE APPLICATIONS IN INDUSTRY AND DEFENSE (United States, 25/04/2011)

2011

DOI: https://doi.org/10.1117/12.887952

Résumé

Terahertz

imaging

detection

plasmon

high electron mobility transistor

In this work, the performance of InP-based HEMTs as a THz detector was experimentally studied. The nature of the THz rectification by the two-dimensional plasmons in which the DC drain current variation Delta I-d becomes maximal around the threshold voltage was observed. Based on the imaging measurement, it was confirmed that our HEMTs device can work for sensitive THz imaging at 0.3 THz. The directivity of the detector was characterized with the maximum responsivity of 26.1 V/W at theta = 160 degrees.

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Détails

Titre: Terahertz Imaging with InP High-electron-mobility Transistors
Créateurs - sans rôle: Takayuki Watanabe - Tohoku University
Keisuke Akagawa - Tohoku University
Yudai Tanimoto - Tohoku University
Dominique Coquillat - Université de Montpellier, Laboratoire Charles Coulomb - L2C
Wojciech Knap - Université de Montpellier, Laboratoire Charles Coulomb - L2C
Taiichi Otsuji - Tohoku University
Détails de publication: Proceedings of SPIE, Vol.8023
Colloque: TERAHERTZ PHYSICS, DEVICES, AND SYSTEMS V: ADVANCE APPLICATIONS IN INDUSTRY AND DEFENSE (United States, 25/04/2011)
Identifiants: 9942020009311
Unité académique: Laboratoire Charles Coulomb - L2C
Langue: English
Type de ressource: Conference proceeding
Champs locaux: hal-00814213