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Terahertz Imaging Using Strained-Si MODFETs as Sensors
Acte de colloque

Terahertz Imaging Using Strained-Si MODFETs as Sensors

Yahya Moubarak Meziani, Enrique Garcìa-Garcìa, Jesús Enrique Velazquez-Perez, Dominique Coquillat, Nina Diakonova, Wojciech Knap, Ignas Grigelionis et Kristel Fobelets
2012 International Silicon-Germanium Technology and Device Meeting (ISTDM)
International Conference on Silicon-Germanium Technology and Device Meeting (ISTDM) (Berkeley, United States, 04/06/2012–06/06/2012)
25/06/2012
DOI: https://doi.org/10.1109/ISTDM.2012.6222464

Résumé

CMOS image sensors Ge-Si alloys MOSFET bow-tie antennas elemental semiconductors focal planes high electron mobility transistors oscillations terahertz spectroscopy terahertz wave detectors terahertz wave imaging FETs Image sensors Logic gates Sensors Silicon
Development of new terahertz (THz) sensors is increasing in interest due to their potential for THz imaging and spectroscopy. One alternative to develop direct THz sensors is based in the oscillation of the plasma waves in the channel of sub-micron FETs.The n-channel Si/SiGe MODFETs used in this study were grown by MBE on a thick relaxed SiGe virtual substrate grown by low-energy PECVD on plain Si wafers.

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