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Terahertz Detection by Field Effect Transistors for Security Imaging
Acte de colloque

Terahertz Detection by Field Effect Transistors for Security Imaging

Wojciech Knap, Frederic Teppe, Christophe Consejo, Boris Chenaud, J. Torres, Pierre Solignac, Z. R. Wasilewski, Maksim Zholudev, Nina Diakonova, Dominique Coquillat, …
TERAHERTZ PHYSICS, DEVICES, AND SYSTEMS V: ADVANCE APPLICATIONS IN INDUSTRY AND DEFENSE (Orlando, United States, 25/04/2011)
2011
DOI: https://doi.org/10.1117/12.883661

Résumé

PLASMA RADIATION
In this work we review the most important results concerning the physics and applications of FETs as Terahertz detectors [1]. We present two experiments showing: i) Terahertz detection based on low cost 130 nm silicon technology Field Effect Transistors in the sub-THz range (0.2 THz up to 1.1 THz) and ii) first results on detection by FETs of emission from 3.1 THz Quantum Cascade Lasers.

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