Résumé
SRAMs have been used for many years as leading radiation test detector. Standard testing procedures for accelerated neutron radiation suggest testing the memory under static or dynamic operation mode, in nominal conditions and introducing variation to these conditions. The most commonly used method is testing the memory in static mode and varying the supply voltage. In this work, we study the response of a commercial 90nm 32Mbit SRAM under the ISIS atmospheric neutron beam, applying temperature variations in static and dynamic operational modes. Experimental results show that Single Event Upsets (SEUs) and the device Soft Error Rate (SER) are strongly related to both temperature and operation mode.