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Temperature Dependence of Terahertz Radiation Detection by Field Effect Transistors
Acte de colloque

Temperature Dependence of Terahertz Radiation Detection by Field Effect Transistors

Oleg Klimenko, Frederic Teppe, Wojciech Knap, B. Iniguez, Dominique Coquillat, Y. A. Mityagin, N. V. Dyakonova, Hadley Videlier, F. Lime, J. Marczewski, …
International Conference on Infrared Millimeter and Terahertz Waves
2012 37TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) (Wollongong, NSW, Australia, 23/09/2012–28/09/2012)
2012

Résumé

FETs Logic gates Plasma temperature Temperature Temperature dependence Temperature measurement field effect transistors terahertz wave detectors
We have measured the Terahertz photoresponse of three types of FETs as a function of the temperature, to study the change of the dominant current mechanism. For all of them we have compared the photoresponse with its DC transfer characteristics, which is directly proportional to the conductivity.

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