Résumé
The proposed test method aims to detect TSV defects without requiring any contact from a probe-card and thus allows pre-bond testing before wafer thinning. As in previous proposals from the literature, the TSV under test is used by the proposed DfT scheme as a capacitive load and the measure of its charge/discharge delay is used as an indirect measure of its RC parameters. The proposed solution allows testing TSVs individually and at the same time with a small impact of the area overhead for the associated DfT.