Résumé
In this work, we propose a system-level test methodology to qualify a set of SD and SSD COTS SLC, MLC and TLC and 3D NAND Flash memories exposed to ionizing radiation. The radiation of the devices under high energy X-rays cause electrical and functional failures of different types. We demonstrate a direct correlation between an increase in current consumption and functional failures in the write speed of each memory. In addition, we show a comparative analysis between 2D and 3D NAND FLASH memories in order to select the most appropriate technology for a nuclear decommissioning mission.