Résumé
We demonstrate a periodic array of metallic insulator-metallic nano-resonators using highly doped InAsSb semiconductors on GaSb substrate that can be described as a high absorber in the infrared region. Our simulation approach permits to obtain analytically the optical properties of the absorption structure with rigorous couple-wave analysis and thus to establish a coherent fabrication geometry for almost total absorption at certain wavelengths. Furthermore, the fabricated nano-resonator arrays by laser lithography and acid wet chemical etching show absorption at certain wavelengths. There is a linear relationship between the peak maximum and the nano-resonator width.