Résumé
We show that the surface stoichiometry of the film—i.e., cation‐ or anion‐stable surface—provides a unique means to control the interface formation and sample quality during molecular‐beam epitaxy of strained InAs films buried in an Al
x
Ga0.48−x
In0.52As matrix lattice matched to InP substrates. When the highly (3.2%) strained InAs films are grown under As‐stable conditions, islanding occurs which leads to defected interfaces. On the contrary, under In‐stable conditions islanding of the InAs films is prevented and high quality strained interfaces are obtained.