Study of the RIE process on ungated MESFET by low frequency noise analysis

Y Mourier; F Pascal; S Jarrix; C Delseny; G Lecoy; P Tadyszak; A Cappy; M E Levinshtein

Acte de colloque

Study of the RIE process on ungated MESFET by low frequency noise analysis

Y Mourier, F Pascal, S Jarrix, C Delseny, G Lecoy, P Tadyszak, A Cappy et M E Levinshtein

Noise in physical systems and 1/f fluctuations : proceedings of the 14th International Conference, Leuven, Belgium, 14-18 July 1997, pp.23-26

01/01/1997

Résumé

Acoustics

Engineering

Engineering, Electrical & Electronic

Physical Sciences

Physics

Physics, Applied

Science & Technology

Technology

Low frequency noise measurements on ungated MESFET with and without a recess are presented. The study of associated TLM test structures shows that the excess contact noise is negligible compared to the volume noise. On recessed MESFET a significant increase of the noise components is observed, in particular for the g-r process. The origin of the g-r noise is discussed in terms of a surface effect compared to a bulk effect. Also measurements versus temperature and under illumination are presented, pointing out surface damage due to the etch process.

Indicateurs

1 Consultations de la notice

Détails

Titre: Study of the RIE process on ungated MESFET by low frequency noise analysis
Créateurs - sans rôle: Y Mourier
F Pascal
S Jarrix
C Delseny
G Lecoy
P Tadyszak
A Cappy
M E Levinshtein
Contributeurs - sans rôle: C Claeys
E Simoen
Détails de publication: Noise in physical systems and 1/f fluctuations : proceedings of the 14th International Conference, Leuven, Belgium, 14-18 July 1997, pp.23-26
Éditeur: World Scientific
Nombre de pages: 4
Identifiants: 99162125909311
Unité académique: Institut d'Electronique et des Systèmes - IES
Langue: English
Type de ressource: Conference proceeding