Résumé
We report the growth of LiNbO3 thin films onto In2O3:Sn-coated <111>-Si substrates by standard radio-frequency sputtering. Multi-layer procedures, up to 4 successive deposits, have been developed that can subsequently improve the structural and macroscopic ferroelectric properties of such as-grown composite structures. The enhancement of polarization, as high as 40 microC.cm-2 in 4-stacked layers, is attributed to c-oriented seed-layer-induced crystallization (self-polarization) and interfacial (migratory) polarization.