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Strain-induced correlations between the phonon frequencies of indium nitride
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Strain-induced correlations between the phonon frequencies of indium nitride

Olivier Briot, Bernard Gil, B. Maleyre, Sandra Ruffenach, C. Pinquier, François Demangeot et J. Frandon
INTERNATIONAL CONFERENCE ON PHYSICS OF LIGHT-MATTER COUPLING IN NANOSTRUCTURES III (PLMCN3), pp.1420-1424
3rd International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN3) (Acireale (ITALY), Italy, 01/10/2003)
2004

Résumé

VAPOR-PHASE EPITAXY FUNDAMENTAL-BAND GAP OPTICAL-PROPERTIES DEFORMATION POTENTIALS HEXAGONAL INN THIN-FILMS WURTZITE INN ALPHA-GAN X-RAY RAMAN
Using measurements of phonons frequencies in large size InN quantum dots deposited by Metal-organic vapor phase epitaxy, we found these frequencies to experience a blue shift with increasing compression. Next we show that all the phonon frequencies reported in the literature are correlated to the strain state of InN and are, within the experimental uncertainty, consistent with each other. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA. Weinheim.

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