Statistical Energy Study for 28nm FDSOI Technology

Rida Kheirallah; Gilles R. Ducharme; Nadine Azemard

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Statistical Energy Study for 28nm FDSOI Technology

Rida Kheirallah, Gilles R. Ducharme et Nadine Azemard

6th International Workshop on CMOS Variability

VARI: Workshop on CMOS Variability (Salvador, Bahia, Brazil, 01/09/2015–04/09/2015)

2015

Résumé

energy

power-delay tradeoff

FDSOI technology

process variability

Due to the effects of the Moore’s law, the process variations in current technologies are increasing and have a major impact on power and performance which results in parametric yield loss. Due to this, process variability and the difficulty of modeling accurately transistor behavior impede the dimensions scaling benefits. The Fully Depleted Silicon-On-Insulator (FDSOI) technology is one of the main contenders for deep submicron devices as they can operate at low voltage with superior energy efficiency compared with bulk CMOS. In this paper, we study the static energy on 28nm FDSOI devices to implement sub-threshold circuits. Study of delay vs. static power trade-off reveals the FDSOI robustness with respect to process variations.

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Détails

Titre: Statistical Energy Study for 28nm FDSOI Technology
Créateurs - sans rôle: Rida Kheirallah - Smart Integrated Electronic Systems
Gilles R. Ducharme - Probabilités et statistiques
Nadine Azemard - Smart Integrated Electronic Systems
Colloque: VARI: Workshop on CMOS Variability (Salvador, Bahia, Brazil, 01/09/2015–04/09/2015)
Publications en série: 6th International Workshop on CMOS Variability
Identifiants: 9942655509311
Unité académique: Institut Montpelliérain Alexander Grothendieck - IMAG; Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier - LIRMM
Langue: English
Type de ressource: Conference proceeding
Champs locaux: lirmm-01256280