Spatial analysis of voltage fluctuations in semiconductor n+nn+ structures

Acte de colloque

Tomás González, Daniel Pardo, Luca Varani et Lino Reggiani

Vol.285, pp.220-223

Proc. of 12th International Conference on Noise in Physical Systems and 1/f Fluctuations

12th International Conference on Noise in Physical Systems and 1/f Fluctuations

1993

Résumé

Computational Physics

Condensed Matter

Electronics

Engineering Sciences

Physics

1 Consultations de la notice

Titre: Spatial analysis of voltage fluctuations in semiconductor n+nn+ structures
Créateurs - sans rôle: Tomás González - Departamento de Fisica Aplicada [Salamanca]
Daniel Pardo - Departamento de Fisica Aplicada [Salamanca]
Luca Varani - CNR-INFM and Dipartimento di Fisica, Università di Modena e Reggio Emilia
Lino Reggiani - CNR-INFM and Dipartimento di Fisica, Università di Modena e Reggio Emilia
Détails de publication: Vol.285, pp.220-223
Colloque: 12th International Conference on Noise in Physical Systems and 1/f Fluctuations
Publications en série: Proc. of 12th International Conference on Noise in Physical Systems and 1/f Fluctuations
Éditeur: AIP
Identifiants: 99162127009311
Unité académique: Institut d'Electronique et des Systèmes - IES
Langue: English
Type de ressource: Conference proceeding