Résumé
GaSb-based interband cascaded lasers (ICLs) have now become a leading laser source to cover the mid-infrared (mid-IR) spectral range (3-6 µm). In the last decade, the success of the silicon photonics industry thanks to its optical properties, low cost and easy commercialization of its large wafers size. However, this requires all Sb-based optoelectronics functions on a Si platform. We will discuss about our recent results on single mode distributed feedback interband cascade lasers (ICL) directly grown on Si emitting between 3 and 4 µm.