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Single-mode GaSb-based monolithic VCSELs grown by MBE operating in CW up to 70°C
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Single-mode GaSb-based monolithic VCSELs grown by MBE operating in CW up to 70°C

L. Cerutti, D. Sanchez et E. Tournié
17th Conference on Molecular Beam epitaxy (MBE2012) (Nara, Japan, 2012)

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