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Single Event Latchup Cross Section Calculation from TCAD Simulations – Effects of the Doping Profiles and Anode to Cathode Spacing
Acte de colloque   Open Access

Single Event Latchup Cross Section Calculation from TCAD Simulations – Effects of the Doping Profiles and Anode to Cathode Spacing

S. Guagliardo, Frédéric Wrobel, Y. Q. Aguiar, J.-L. Autran, P. Leroux, F. Saigné, V. Pouget et Antoine Touboul
IEEE Transactions on Nuclear Science Modeling and Simulation of Radiation Effects 2019
IEEE Transactions on Nuclear Science
IEEE RADECS 2019 (Montpellier, France, 16/09/2019–20/09/2019)

Résumé

Single-Event Latchup TCAD simulations Cross section
In this paper SEL cross sections were calculated from TCAD simulations varying doping profiles and anode-to-cathode spacing values. We found that doping profiles variation has a stronger impact on SEL sensitivity then variation of spacing.

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