Simulation of plasma oscillation response to THz radiation applied upon high electron mobility transistors

Abdelhamid Mahi; Abderrahmane Belghachi; Hugues Marinchio; Christophe Palermo; Luca Varani; IEEE

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Simulation of plasma oscillation response to THz radiation applied upon high electron mobility transistors

Abdelhamid Mahi, Abderrahmane Belghachi, Hugues Marinchio, Christophe Palermo, Luca Varani et IEEE

2014 INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE)

01/01/2014

Résumé

Computer Science

Computer Science, Hardware & Architecture

Engineering

Engineering, Electrical & Electronic

Science & Technology

Technology

By means of a numerical hydrodynamic (HD) model coupled with Poisson pseudo-2D equation, we simulate the drain current response of a high electron mobility transistor (HEMT) to a THz signal applied to its gate and/or to its drain contacts in order to obtain the optimal configuration in terms of detection.

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Détails

Titre: Simulation of plasma oscillation response to THz radiation applied upon high electron mobility transistors
Créateurs - sans rôle: Abdelhamid Mahi - University of Bechar
Abderrahmane Belghachi - University of Bechar
Hugues Marinchio - Univ Montpellier 2, CNRS, Inst Elect Sud, UMR 5214, F-34095 Montpellier 5, France
Christophe Palermo - Institut d'Électronique et des Systèmes
Luca Varani - Institut d'Électronique et des Systèmes
IEEE
Détails de publication: 2014 INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE)
Éditeur: IEEE
Nombre de pages: 2
Note de subvention: MIP-058/2013 / Lithuanian Science Council and by TeraLab-Montpellier
Identifiants: 99162643409311
Unité académique: Institut d'Electronique et des Systèmes - IES
Langue: English
Type de ressource: Conference proceeding