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Silicon-on-Insulator spectrometers with integrated GaInAsSb photodiode array for wideband operation from 1500 to 2300 nm
Acte de colloque

Silicon-on-Insulator spectrometers with integrated GaInAsSb photodiode array for wideband operation from 1500 to 2300 nm

E. Ryckeboer, A. Gassenq, N. Hattasan, L. Cerutti, J. B. Rodriguez, E. Tournie, R. Baets, G. Roelkens et IEEE
2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), pp.1-2
Conference on Lasers and Electro-Optics
01/01/2013

Résumé

Engineering Engineering, Electrical & Electronic Optics Physical Sciences Physics Physics, Applied Science & Technology Technology
Four echelle-type spectrometers with heterogeneously integrated GaInAsSb photodetectors on a silicon-on-insulator chip is realized. The operating wavelengths stretch from 1500 to 2300 nm. A maximum channel crosstalk of -10 dB, dark current of -2.5 mu A and responsivity of 0.61 A/W at 1530 nm and 0.7 A/W at 2200 nm were obtained.

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