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Sb-based interband cascade Mid-IR devices with top GaAs metamorphic layers
Acte de colloque   Open Access

Sb-based interband cascade Mid-IR devices with top GaAs metamorphic layers

Daniel Andres Díaz Thomas, Oleksandr Stepanenko, Michaël Bahriz, Stéphane Calvez, Thomas Batte, Cyril Paranthoen, Eric Tournié, Alexei Baranov, Guilhem Almuneau, Christophe Levallois, …
Compound Semiconductor Week 2021 (CSW 2021) (Stockholm (online), Sweden, 09/05/2021–13/05/2021)

Résumé

Interband cascade devices mid-infrared metamorphic GaAs
We present two different GaSb based interband cascade devices emitting between 3 and 4 µm containing a metamorphic GaAs layer above the active region. The first structure is a Resonant Cavity Light Emitting Diode with an oxidized Al(Ga)As layer whereas the second structure is an Interband Cascade Laser with a GaAs top cladding.

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