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Room temperature direct-gap electroluminescence in Ge/SiGe quantum well waveguides
Acte de colloque

Room temperature direct-gap electroluminescence in Ge/SiGe quantum well waveguides

Papichaya Chaisakul, Delphine Marris-Morini, Giovanni Isella, Daniel Chrastina, Jacopo Frigerio, Mohamed-Said Rouifed, Nicolas Izard, Xavier Le Roux, Samson Edmond, Jean-Rene Coudevylle, …
SILICON PHOTONICS AND PHOTONIC INTEGRATED CIRCUITS III, Vol.8431(1), pp.843119-843118
Proceedings of SPIE
01/01/2012

Résumé

Engineering Engineering, Electrical & Electronic Optics Physical Sciences Physics Physics, Applied Science & Technology Technology
Room temperature direct gap electroluminescence (EL) from a Ge/Si0.15Ge0.85 MQW waveguide was experimentally studied. The dependence of the EL intensity on the injection current and temperature was measured. The direct gap EL from Ge/SiGe MQWs was shown to be transverse-electric (TE) polarized, confirming that the EL originates from recombination with a HH state.

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