Room temperature, continuous wave operation of an Sb-based laser grown on GaAs substrate

L. Cerutti; J. B. Rodriguez; P. Grech; E. Tournie; IEEE

Acte de colloque

Room temperature, continuous wave operation of an Sb-based laser grown on GaAs substrate

L. Cerutti, J. B. Rodriguez, P. Grech, E. Tournie et IEEE

2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5, pp.1405-1406

01/01/2009

Résumé

Engineering

Engineering, Electrical & Electronic

Optics

Physical Sciences

Physics

Physics, Applied

Science & Technology

Technology

We report on the first Sb-based type-1 laser grown on GaAs substrate operating continuous-wave around 2.2 mu m at room-temperature. The device was grown using solid-source molecular beam epitaxy and comprised two GaInAsSb quantum-wells embedded in AlGaAsSb barriers. Despite the large lattice-mismatch, a good crystalline quality was obtained, and processed devices operated continuous wave up to 50 degrees C, with threshold current densities in the range of 1.5 to 2.2 kA/cm(2). An optical output power of 3.7 mW was obtained at 20 degrees C. (C) 2009 Optical Society of America

Indicateurs

1 Consultations de la notice

Détails

Titre: Room temperature, continuous wave operation of an Sb-based laser grown on GaAs substrate
Créateurs - sans rôle: L. Cerutti - Univ Montpellier 2, CNRS, IES, UMR 5214,Case 067, F-34095 Montpellier 05, France
J. B. Rodriguez - Univ Montpellier 2, CNRS, IES, UMR 5214,Case 067, F-34095 Montpellier 05, France
P. Grech - Institut d'Électronique et des Systèmes
E. Tournie - Institut d'Électronique et des Systèmes
IEEE
Détails de publication: 2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5, pp.1405-1406
Éditeur: IEEE
Nombre de pages: 2
Identifiants: 99139280409311
Unité académique: Institut d'Electronique et des Systèmes - IES
Langue: English
Type de ressource: Conference proceeding