Résumé
The authors report on tunable terahertz resonant detection of two 1.55 mu m cw-lasers beating by plasma waves in AlGaAs/InGaAs/InP high-electron-mobility transistor. The fundamental plasma resonant frequency and its odd harmonies can be tuned with the applied gate-voltage in the range 0-600 GHz. Amplification of photoresponse under applied de drain-source current is demonstrated.