Room temperature, Sb-based monolithic EP-VCSEL at 2.3 mu m including 2 n-type DBR

A. Ducanchez; L. Cerutti; A. Garnache; F. Genty; IEEE

Acte de colloque

Room temperature, Sb-based monolithic EP-VCSEL at 2.3 mu m including 2 n-type DBR

A. Ducanchez, L. Cerutti, A. Garnache, F. Genty et IEEE

2008 Conference on Lasers and Electro-Optics & Quantum Electronics and Laser Science Conference : San Jose, CA, 4-9 May, 2008, pp.1760-1761

01/01/2008

Résumé

Engineering

Engineering, Electrical & Electronic

Optics

Physical Sciences

Science & Technology

Technology

We demonstrate a 2.3 mu m emission at RT under quasi-CW operation from a Sb-based monolithic VCSEL. The structure is composed of 2 n-doped AlAsSb/GaSb DBR, a type-I GaInAsSb/AlGaAsSb QWs active region and a tunnel junction. (C) 2009 Optical Society of America

Indicateurs

1 Consultations de la notice

Détails

Titre: Room temperature, Sb-based monolithic EP-VCSEL at 2.3 mu m including 2 n-type DBR
Créateurs - sans rôle: A. Ducanchez - Institut d'Électronique et des Systèmes
L. Cerutti - Univ Montpellier 2, IES, CNRS, UMR 5214, F-34095 Montpellier 05, France
A. Garnache - Institut d'Électronique et des Systèmes
F. Genty - Univ Montpellier 2, IES, CNRS, UMR 5214, F-34095 Montpellier 05, France
IEEE
Détails de publication: 2008 Conference on Lasers and Electro-Optics & Quantum Electronics and Laser Science Conference : San Jose, CA, 4-9 May, 2008, pp.1760-1761
Éditeur: IEEE
Nombre de pages: 2
Identifiants: 99139287309311
Unité académique: Institut d'Electronique et des Systèmes - IES
Langue: English
Type de ressource: Conference proceeding