- Titre
- Room Temperature Physical Characterization of Implanted 4H- and 6H-SiC
- Créateurs - sans rôle
- Konstantinos Zekentes - Institute of Electronic Structure & LaserKaterina TsagarakiMaria AndroulidakiMaria KayambakiAntonis StavrinidisHervé Peyre - Université de Montpellier, Laboratoire Charles Coulomb - L2CJean Camassel - Université de Montpellier, Laboratoire Charles Coulomb - L2C
- Détails de publication
- 14th International Conference on Silicon Carbide and Related Materials 2011, Vol.717-720, pp.589-592
- Colloque
- 14th International Conference on Silicon Carbide and Related Materials 2011 (Cleveland, United States, 11/09/2011)
- Identifiants
- 99151798309311
- Unité académique
- Laboratoire Charles Coulomb - L2C
- Langue
- English
- Type de ressource
- Conference proceeding
- Champs locaux
- hal-02025470
Acte de colloque
Room Temperature Physical Characterization of Implanted 4H- and 6H-SiC
14th International Conference on Silicon Carbide and Related Materials 2011, Vol.717-720, pp.589-592
14th International Conference on Silicon Carbide and Related Materials 2011 (Cleveland, United States, 11/09/2011)
05/2012
Indicateurs
1 Consultations de la notice