Results of SIMS, LTPL and temperature-dependent Hall effect measurements performed on Al-doped alpha-SiC substrates grown by the M-PVT method

Sylvie Contreras; M. Zielinski; Leszek Konczewicz; Caroline Blanc; Sandrine Juillaguet; R. Mueller; U. Kuenecke; P. Wellmann; Jean Camassel

Acte de colloque

Results of SIMS, LTPL and temperature-dependent Hall effect measurements performed on Al-doped alpha-SiC substrates grown by the M-PVT method

Sylvie Contreras, M. Zielinski, Leszek Konczewicz, Caroline Blanc, Sandrine Juillaguet, R. Mueller, U. Kuenecke, P. Wellmann et Jean Camassel

International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Vol.527-529, pp.633-636

International Conference on Silicon Carbide and Related Materials (ICSCRM 2005) (Pittsburgh (PA), France, 18/09/2005)

2006

Résumé

p-type bulk

Al doping

Hall effect

SIMS

We report on investigation of p-type doped, SiC wafers grown by the Modified-Physical Vapor Transport (M-PVT) method. SIMS measurements give Al concentrations in the range 10(18) to 10(20) cm(-3), with weak Ti concentration but large N compensation. To measure the wafers' resistivity, carrier concentration and mobility, temperature-dependant Hall effect measurements have been made in the range 100-850 K using the Van der Pauw method. The temperature dependence of the mobility suggests higher Al concentration, and higher compensation, than estimated from SIMS. Additional LTPL measurements show no evidence of additional impurities in the range of investigation, but suggest that the additional compensation may come from an increased concentration of non-radiative centers.

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Titre: Results of SIMS, LTPL and temperature-dependent Hall effect measurements performed on Al-doped alpha-SiC substrates grown by the M-PVT method
Créateurs - sans rôle: Sylvie Contreras - Groupe d'étude des semiconducteurs
M. Zielinski
Leszek Konczewicz - Groupe d'étude des semiconducteurs
Caroline Blanc
Sandrine Juillaguet - Groupe d'étude des semiconducteurs
R. Mueller
U. Kuenecke
P. Wellmann
Jean Camassel - Groupe d'étude des semiconducteurs
Détails de publication: International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Vol.527-529, pp.633-636
Colloque: International Conference on Silicon Carbide and Related Materials (ICSCRM 2005) (Pittsburgh (PA), France, 18/09/2005)
Identifiants: 9938235909311
Unité académique: Université de Montpellier
Langue: English
Type de ressource: Conference proceeding
Champs locaux: hal-00536296