Résumé
There is a major interest in fabricating III-nitride photonic structures for efficient nonlinear optical processes such as second-harmonic generation because they offer fairly large non linear coefficients and high optical damage thresholds. However, the use of III-nitrides has not been possible practically due to the high dispersion and the small birefringence for phase-matching. Recently, we have shown experimentally the enhancement of second-harmonic generation in epitaxial GaN-based photonic crystals [1]. By using calculated and experimental equifrequency surfaces, it is possible to identify the geometrical configurations that will allow quasi-phase matching to be satisfied and observed experimentally in the available wavelength tuning range of the laser. The second-harmonic field generated has been measured in reflection from the surface of photonic crystals etched into a GaN layer. A very large second-harmonic enhancement is observed when simultaneously the incident beam at the fundamental frequency ω excites a resonant Bloch mode and the second-harmonic field generated is coupled into a resonant Bloch mode at 2ω.