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Reliability Aspects of High Voltage 4H-SiC JBS Diodes
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Reliability Aspects of High Voltage 4H-SiC JBS Diodes

Pierre Brosselard, Nicolas Camara, Xavier Jorda, Miquel Vellvehi, Edwige Bano, Jose Millan et Philippe Godignon
Materials science forum, Vol.600-603, pp.935-938
Materials Science Forum
01/01/2009

Résumé

Materials Science Materials Science, Ceramics Materials Science, Multidisciplinary Science & Technology Technology
1.2 kV and 3.5 kV JBS diodes have been fabricated using the same technology process. After 50 hours of DC stress, 1.2 kV diodes do not exhibit any degradation in forward mode whereas the 3.5 kV JBS diodes show a degradation after ten hours. This behaviour has been confirmed by the formation of Stacking Faults clearly illustrated by electroluminescence microscopy in 3.5 kV JBS diodes, whereas it is not the case for the 1.2 kV JBS diodes.

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