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Reducing noise equivalent power in InP DHBT terahertz detector by biasing the collector
Acte de colloque

Reducing noise equivalent power in InP DHBT terahertz detector by biasing the collector

N. Dyakonova, D. Coquillat, D. But, C. Consejo, F. Teppe, W. Knap, L. Varani, S. Blin, V. Nodjiadjim, A. Konczykowska, …
2017 International Conference on Noise and Fluctuations (ICNF) (Vilnius, Lithuania, 20/06/2017–23/06/2017)
DOI: https://doi.org/10.1109/ICNF.2017.7986010

Résumé

photocurrent InP detectors THz NEP low frequency noise DHBT
—We present the low frequency noise and the photoresponse in InP double heterojunction bipolar transistor (DHBT) THz detectors. A current responsivity of 0.23 A/W and a noise equivalent power of 4·10-10 W/Hz 1/2 have been measured at 1 kHz modulation frequency. The collector bias can substantially reduce the noise equivalent power.

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