Résumé
There are reviewed the optical properties of two kind of active regions of mid infrared laser devices both grown on GaSb
substrates: GaInAsSb/AlGaInAsSb type I QWs for laser diodes and InAs/GaInAsSb type II QWs for interband cascade
lasers. There are presented their crucial optical properties and the related current challenges with respect to the device
performances. This covers such issues as spectral tenability of the emission via the structure parameters, the band gap
discontinuities, carrier loss mechanisms and oscillator strengths. For that, spectroscopic techniques have been used
(photoluminescence and its temperature dependence, and photoreflectance) and combined with the energy level
calculations based on effective mass approximation and kp theory. Eventually, the potential for further material
optimization and prospects for the improved device performances are also discussed.