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Raman investigation of aluminum-doped 4H-SiC
Acte de colloque

Raman investigation of aluminum-doped 4H-SiC

Sandrine Juillaguet, Pawel Kwasnicki, Herve Peyre, Leszek Konczewicz, Sylvie Contreras, Marcin Zielinski et Jean Camassel
Silicon Carbide and Related Materials 2012, Vol.740-742, pp.357-360
ECSCRM 2012 (Saint-Petersburg, Russia, 02/09/2012–06/09/2012)
25/01/2013

Résumé

p doping SIMS measurements 4H-SiC Raman spectroscopy Fano interference effects
Raman scattering spectra have been collected on p-type 4H-SiC samples doped with aluminum up to 5×10^19 atoms per cubic cm. The distortion and asymmetry of FTA modes which appear in the low frequency range has been probed in great details. We show that, using standard Fano formulae with three parameters per mode, one can successively fit all FTA modes profiles in the concentration range 2×10^16 - 5×10^19 Al.cm-3

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