- Titre
- Raman and PL Study of Thick HVPE-grown GaN
- Créateurs - sans rôle
- J.L. Weyher - Institute of High Pressure PhysicsRenata Lewandowska - Centre National de la Recherche ScientifiqueLukasz MachtBoleslaw Łucznik - Institute of High Pressure PhysicsIzabella Grzegory - Institute of High Pressure Physics
- Détails de publication
- Materials Science in Semiconductor Processing, Vol.9(1-3)
- Colloque
- 11th Conference on Defects Recognition Imaging and Physics in Semiconductors (Beijing, China, 13/09/2005–19/09/2005)
- Identifiants
- 9936679809311
- Unité académique
- Université de Montpellier
- Langue
- English
- Type de ressource
- Conference proceeding
- Champs locaux
- hal-00401331
Acte de colloque
Raman and PL Study of Thick HVPE-grown GaN
Materials Science in Semiconductor Processing, Vol.9(1-3)
11th Conference on Defects Recognition Imaging and Physics in Semiconductors (Beijing, China, 13/09/2005–19/09/2005)
2006
Indicateurs
1 Consultations de la notice