Résumé
With the transistor size shrinking and ICs operating at both low energies and high frequencies, devices have become more sensitive to Single Event Effects (SEE) as a result of particles produced by cosmic rays when colliding to the earth's atmosphere. Therefore, devices destined for high reliability applications such as avionics, medical devices or nuclear plants must be exhaustively tested for fault tolerance against soft errors. There have been many studies analyzing SEE but also proposing methods for the mitigation of the ICs against radiation. Such studies have been conducted at the LIRMM laboratory, and more specifically concerning the effects of thermal and high energy neutrons on SRAMs. My thesis will continue this effort for the better understanding of neutron induced effects on SRAMs but also on other types of memories and electronic devices. Part of this research is the irradiation of electronic components with high-energy neutrons usingparticle accelerators at specialized facilities such as ISIS at Didcot (UK) and TSL at Uppsala (Sweden). Recently, we had the opportunity to perform experiments on both these facilities, observing the effects of different energy neutrons on SRAMs and MRAMs. Moreover, we conducted a survey on the effects of neutrons on SRAMs at the simulation level, in order to define better the origin of Multiple Bit Upsets (MBU) which is the flip of more than one bits due to a particle hit on the memory. Future work will include the analysis of data, retrieved from the TSL facility experiments on SRAMs and MRAMs. An in depth study of MRAMs and their resilience to soft errors when hit by high energy neutrons will be done. Finally, other electronic devices such as FPGAs, microcontrollers etc will be tested and analyzed under radiation both at simulation and experimental level.