Résumé
A few years ago, we demonstrated that graphene can markedly surpass GaAs/AlGaAs semiconductor heterostructures for the implementation of the quantum Hall resistance standard in relaxed experimental conditions, while preserving a state-of-the-art accuracy [1]. This paper describes supplementary quantum transport experiments performed on a significant number of graphene based quantum Hall devices obtained from graphene grown by CVD on SiC, like the one used for the above-mentioned demonstration, and with similar process and preparation. The objectives were to investigate the sample-to-sample reproducibility of the electronic properties and device performance, the structural key control parameter and the underpinning physics.