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Prediction of transients induced by neutrons/protons in CMOS combinational logic cells
Acte de colloque

Prediction of transients induced by neutrons/protons in CMOS combinational logic cells

A. Hubert, A. Bougerol, F. Miller, N. Buard, Lorena Anghel, T. Carriere, Frédéric Wrobel et R. Gaillard
On-Line Testing Symposium, 2006. IOLTS 2006. 12th IEEE International
ISBN: 0-7695-2620-9
12th IEEE International On-Line Testing Symposium (IOLTS'06) (Lake Como, Italy, 2006)
2006

Résumé

Monte-Carlo-method CMOS-realization PACS 85.42
This paper presents a new Monte-Carlo methodology to investigate the transient effect occurrence in complementary metal oxide semiconductor (CMOS) logic circuits: TMC DASIE (transient Monte-Carlo detailed analysis of secondary ion effects). The production and effects of single-event transients inside CMOS combinational logic gates are examined. First results and perspectives are presented.

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