Power and Performance Analysis of Doped SW/DW CNT for On-Chip Interconnect Application

Aida Todri-Sanial; Jie Liang

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Power and Performance Analysis of Doped SW/DW CNT for On-Chip Interconnect Application

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Power and Performance Analysis of Doped SW/DW CNT for On-Chip Interconnect Application

Aida Todri-Sanial et Jie Liang

7th edition of the largest European Conference in Graphene and 2D Materials

GRAPHENE (Barcelone, Spain, 28/03/2017–31/03/2017)

2017

Résumé

We investigate the electrical properties of doped single wall (SW) and double wall (DW) carbon nanotube (CNT) for integrated circuits interconnect applications. P-type Iodine charge transferred doping has been studied for modifying electrical properties and models of CNT interconnects. We perform circuit-level simulations on a 5-stage ring oscillator implemented with 45nm CMOS technology node devices for power and performance analysis with doped SWCNT and DWCNT interconnects.

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Détails

Titre: Power and Performance Analysis of Doped SW/DW CNT for On-Chip Interconnect Application
Créateurs - sans rôle: Aida Todri-Sanial - Smart Integrated Electronic Systems
Jie Liang - Smart Integrated Electronic Systems
Détails de publication: 7th edition of the largest European Conference in Graphene and 2D Materials
Colloque: GRAPHENE (Barcelone, Spain, 28/03/2017–31/03/2017)
Identifiants: 9943040209311
Unité académique: Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier - LIRMM
Langue: English
Type de ressource: Conference proceeding
Champs locaux: lirmm-01800286