Polarization effects in nitride semiconductor heterostructures

Acte de colloque

Hadis Morkoc, Roberto Cingolani, F DELLA SALA, A Dicarlo, P Lugli et Bernard Gil

International journal of high speed electronics and systems, Vol.10(1), pp.25-37

Frontiers in electronics: from materials to systems

2000

Résumé

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures

Electronic transport in interface structures

Exact sciences and technology

Iii-v semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Physics

1 Consultations de la notice

Titre: Polarization effects in nitride semiconductor heterostructures
Créateurs - sans rôle: Hadis Morkoc - Virginia Commonwealth University
Roberto Cingolani - College of Engineering and Department of Physics, Virginia Commonwealth University P.O. Box 843072, Richmond, VA 23284-3072, United States
F DELLA SALA - Dept. Ingegneria Elettronica, Università Roma Tor Vergata, Roma, Italy
A Dicarlo - Dept. Ingegneria Elettronica, Università Roma Tor Vergata, Roma, Italy
P Lugli - Dept. Ingegneria Elettronica, Università Roma Tor Vergata, Roma, Italy
Bernard Gil - Université de Montpellier
Détails de publication: International journal of high speed electronics and systems, Vol.10(1), pp.25-37
Colloque: Frontiers in electronics: from materials to systems
Éditeur: World Scientific Publishing
Identifiants: 99147401709311
Unité académique: Laboratoire Charles Coulomb - L2C
Langue: English
Type de ressource: Conference proceeding