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Polarization and Frequency studies of Si MOSFET Terahertz Detectors
Acte de colloque

Polarization and Frequency studies of Si MOSFET Terahertz Detectors

Dominique Coquillat, F. Schuster, Nina Diakonova, Frederic Teppe, B. Giffard, P. Kopyt, T. Takada, K. Arakawa, S. Hisatake, T. Nagatsuma, …
International Conference on Infrared Millimeter and Terahertz Waves
2012 37TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) (Wollongong, NSW, Australia, 23/09/2012–28/09/2012)
2012

Résumé

MOSFET antenna radiation patterns bow-tie antennas electromagnetic wave polarisation elemental semiconductors silicon submillimetre wave transistors terahertz wave detectors
Test chips with Si MOSFETs integrating bow tie antennas are investigated to check the polarization and frequency dependence of THz sensitivity. The azimuthal angle corresponding to the maximum sensitivity changes with the pixel position on the chip. This means that the surrounding pixels affect the bow tie radiation pattern and possibly contribute to the antenna coupling. The frequency dependence suggests the presence of surface modes phenomena in the silicon substrate.

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