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Pockels effect study in strained silicon Mach-Zenhder Interferometer
Acte de colloque

Pockels effect study in strained silicon Mach-Zenhder Interferometer

Pedro Damas, Xavier Le Roux, David Le Bourdais, Eric Cassan, Delphine Marris-Morini, Nicolas Izard, Francois Maillard, Thomas Maroutian, Philippe Lecoeur, Laurent Vivien, …
2014 IEEE 11TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP), pp.243-244
IEEE International Conference on Group IV Photonics
01/01/2014

Résumé

Engineering Engineering, Electrical & Electronic Optics Physical Sciences Physics Physics, Applied Science & Technology Technology
We report the study of the wavelength dependence in the NIR range (1.3 mu m-1.63 mu m), of the Pockels effect in strained silicon. The measured second order nonlinear optical susceptibilities varied from chi((2))(xxy) = 7 4 +/- 2 5 pm/V to chi((2))(xxy) = 221 +/- 3 4 pm/V, at lambda = 1300 nm and lambda = 1630 nm respectively.

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